 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTMS4107N Power MOSFET 30 V, 18 A, Single N-Channel, SO-8 Features * Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG * Optimized for Low Side Synchronous Applications * High Speed Switching Capability Applications http://onsemi.com V(BR)DSS 30 V RDS(on) TYP 3.4 mW @ 10 V 4.7 mW @ 4.5 V ID MAX 18 A * Notebook Computer Vcore Applications * Network Applications * DC-DC Converters MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (N t 1) C t (Note Steady State t v10 s Power Dissi ation Dissipation (Note 1) Steady State t v10 s Continuous Drain Current C rrent (Note 2) Power Dissi ation Dissipation (Note 2) Pulsed Drain Current Steady y State TA = 25C TA = 85C TA = 25C PD TA = 25C 25 C 2.5 TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, Tstg IS EAS ID 11 8.0 0.93 56 -55 to 150 3.0 880 W A C A mJ A Symbol VDSS VGS ID Value 30 $20 15 11 18 1.67 W Unit V V A D G S MARKING DIAGRAM/ PIN ASSIGNMENT 1 8 1 SO-8 CASE 751 STYLE 12 Source Source Source Gate 4107N ALYW (Top View) 8 Drain Drain Drain Drain Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 42 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C 4107N A L Y W = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week THERMAL RESISTANCE RATINGS Rating Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJA Max 75 50 135 Unit C/W ORDERING INFORMATION Device NTMS4107NR2 Package SO-8 Shipping 2500/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using 1 sq. pad size (Cu area = 1.127 sq. [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 sq.). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2005 1 March, 2005 - Rev. 1 Publication Order Number: NTMS4107N/D NTMS4107N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 21 1.0 10 $100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit VGS = 0 V VDS = 24 V V, Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = $20 V VGS(TH) VGS(TH)/TJ RDS(on) () VGS = VDS, ID = 250 mA 1.0 7.4 2.5 V mV/C VGS = 4.5 V, ID = 14 A VGS = 10 V, ID = 15 A 4.7 3.4 25 5.5 4.5 mW Forward Transconductance gFS VDS = 15 V, ID = 18 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V IS = 3 0 A V, 3.0 TJ = 25C TJ = 125C 0.8 0.6 41 VGS = 0 V, dIS/dt = 100 A/ms, IS = 3.0 A 20 21 48 nC ns 1.1 V td(ON) tr td(OFF) tf VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W 9.0 10 94 38 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = 4 5 V VDS = 15 V ID = 18 A 4.5 V, V, VGS = 0 V, f = 1.0 MHz, VDS = 15 V , , 6000 1030 550 45 6.5 16.3 19.3 0.60 W nC pF Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMS4107N TYPICAL PERFORMANCE CURVES 28 ID, DRAIN CURRENT (AMPS) 24 20 16 12 8 4 2.6 V 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 0 2.8 V 3.2 V VGS = 4 V to 10 V 3.0 V 28 TJ = 25C ID, DRAIN CURRENT (AMPS) 24 20 16 12 8 4 TJ = 125C TJ = 25C TJ = -55C 4 3 1 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 VDS 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.008 VGS = 10 V 0.007 0.006 0.005 0.004 0.003 TJ = 25C TJ = -55C TJ = 125C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.008 Figure 2. Transfer Characteristics TJ = 25C 0.007 0.006 0.005 0.004 0.003 0.002 0.001 0 2 6 10 14 18 22 26 ID, DRAIN CURRENT (AMPS) VGS = 10 V VGS = 4.5 V 0.002 0.001 0 2 6 10 14 18 22 26 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 16 A VGS = 12 V IDSS, LEAKAGE (nA) 1.5 100000 1000000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V 1 10000 TJ = 150C TJ = 125C 1000 0.5 0 -50 100 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTMS4107N TYPICAL PERFORMANCE CURVES VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 1000 0 Crss Coss TJ = 25C Ciss 10 8 VGS QT 4 QGS 2 0 0 10 ID = 16 A TJ = 25C 20 60 70 80 30 40 50 QG, TOTAL GATE CHARGE (nC) 90 100 QGD 6 0 5 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 1000 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 4.5 V t, TIME (ns) 100 td(off) tf td(on) 10 tr 12 10 8 6 4 2 0 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0.4 0.2 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1 VGS = 0 V TJ = 25C 1 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 ID, DRAIN CURRENT (AMPS) 100 Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 1 ms VGS = 20 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 10 ms 10 1 0.1 0.01 dc 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTMS4107N PACKAGE DIMENSIONS SO-8 CASE 751-07 ISSUE AE -X- A 8 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 B 1 4 S 0.25 (0.010) M Y M -Y- G C -Z- H D 0.25 (0.010) M SEATING PLANE K N X 45 _ 0.10 (0.004) M J ZY S X S DIM A B C D G H J K M N S STYLE 12: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN SOLDERING FOOTPRINT 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches http://onsemi.com 5 NTMS4107N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTMS4107N/D |
Price & Availability of NTMS4107NR2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |